Aluminum Nitride (AlN) ceramics have high thermal conductivity and electrical insulation, so they can be used in a variety of electronic devices. Aluminum nitride has a thermal conductivity greater than 170W/(mk), good resistance to thermal shock, and can be used in high temperature environments up to 2200℃. Therefore, aluminum nitride ceramic products are ideal for many industries, such as:

• 功率模块基板（IGBT、MOSFET封装）
• 散热绝缘结构件
• 芯片封装外壳或支撑件
• 高频器件支撑件
• 微波模块绝缘结构
• 电动汽车功率模块散热底座
• 光伏逆变器内部绝缘/导热部件
• 激光设备中的绝缘支撑件
• 高温环境中的结构部件
• 真空设备中的绝缘组件

Aluminum Nitride (AlN) is a covalently bonded compound, atomic crystal, diamond-like nitride, hexagonal crystal system, fibrillated zincite crystal structure, non-toxic, white or off-white.

• High thermal conductivity (>170W/m-K), close to BeO and SiC, more than 5 times that of Al2O3;
• The coefficient of thermal expansion matches that of Si and GaAs;
• Various electrical properties (dielectric constant, dielectric loss, body resistivity, dielectric strength) are excellent;
• Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, can be sintered at atmospheric pressure;
• It can be produced by casting process and is a promising substrate and packaging material for high power integrated circuits.

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